continental device india limited data sheet page 1 of 3 silicon epitaxial transistors p?n?p transistors marking BF821 = 1w bf823 = 1y absolute maximum ratings BF821 bf823 collector?base voltage (open emitter) ?v cb0 max. 300 250 v collector?emitter voltage (open base) ?v ce0 max. ? 250 v collector?emitter voltage (r be = 2,7 k w )?v cer max. 300 ? v collector current (peak value) ?i cm max. 100 ma total power dissipation up to t amb = 25 c p tot max. 250 mw junction temperature t j max. 150 c d.c. current gain ?i c = 25 ma; ?v ce = 20 v h fe >50 feedback capacitance at f = 1 mhz i c = 0; ?v ce = 30 v c re < 1,6 pf transition frequency at f = 35 mhz ?i c = 10 ma; ?v ce = 10 v f t >60 mhz BF821 bf823 package outline details all dimensions in mm pin configuration 1 = base 2 = emitter 3 = collector 3 2 1 sot-23 formed smd package continental device india limited an iso/ts 16949, iso 9001 and iso 14001 certified company
continental device india limited data sheet page 2 of 3 ratings (at t a = 25c unless otherwise specified) limiting values BF821 bf823 collector?base voltage (open emitter) ?v cb0 max. 300 250 v collector?emitter voltage (open base) ?v ce0 max. ? 250 v collector?emitter voltage (r be = 2,7 k w )?v cer max. 300 ? v emitter?base voltage (open collector) ?v eb0 max. 5 v collector current (d.c.) ? i c max. 50 ma collector current (peak value) ?i cm max. 100 ma total power dissipation up to t amb = 25 c p tot max. 250 mw storage temperature t stg ?55 to +150 c junction temperature t j max. 150 c thermal resistance from junction to ambient r th j?a = 500 k/w characteristics t j = 25 c unless otherwise specified BF821 bf823 collector cut?off current i e = 0; ?v cb = 200v ?i cb0 <10 10na collector?emitter voltage r be = 2,7 k w ; v ce = 250 v ?i cer <50 50na r be = 2,7k w ; v ce = 200v; t j = 150c ?i cer <10 10 m a saturation voltage ?i c = 30 ma; ?l b = 5 ma ?v cesat < 0,8 v d.c. current gain i c = 25 ma; ?v ce = 20 v h fe >50 transition frequency at f = 35 mhz ?i c = 10 ma; ?v ce = 10 v f t >60 mhz feedback capacitance at f = 1 mhz i c = 0; ?v ce = 30 v cre < 1,6 pf BF821 bf823
continental device india limited data sheet page 3 of 3 notes disclaimer the product information and the selection guides facilitate selection of the cdil's discrete semiconductor device(s) best suite d for application in your product(s) as per your requirement. it is recommended that you completely review our data sheet(s) so a s to confirm that the device(s) meet functionality parameters for your application. the information furnished on the cdil web sit e/ cd is believed to be accurate and reliable. cdil however, does not assume responsibility for inaccuracies or incomplete information. furthermore, cdil does not assume liability whatsoever, arising out of the application or use of any cdil product; neither does it convey any license under its patent rights nor rights of others. these products are not designed for use in lif e saving/support appliances or systems. cdil customers selling these products (either as individual discrete semiconductor devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and cdil will not be responsible for any damages resulting from such sale(s). cdil strives for continuous improvement and reserves the right to change the specifications of its products without prior notic e. cdil is a registered trademark of continental device india limited c-120 naraina industrial area, new delhi 110 028, india. telephone + 91-11-579 6150 fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com
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